Characteristics analysis of quantum wire infrared photodetectors under both dark and illumination conditions

被引：7
作者：
El-Tokhy, Mohamed S. [1 ]
Mahmoud, Imbaby I. [1 ]
Konber, Hussein A. [2 ]
机构：
[1] Atom Energy Author, NRC, Dept Engn, Cairo, Egypt
[2] Al Azhar Univ, Dept Elect Engn, Nasr City, Cairo, Egypt
来源：
INFRARED PHYSICS & TECHNOLOGY | 2010年 / 53卷 / 05期
关键词：
Bound-to-continuum transitions; Thermionic emission; Heterostructures;
D O I：
10.1016/j.infrared.2010.05.004
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This paper presents a theoretical analysis for the characteristics of quantum wire infrared photodetectors (QRIPs). Mathematical model describing this device is introduced. Maple 4 software is used to device this model. The developed model is used to investigate the behavior of the device with different values of performance parameters such as number of quantum wire layers, lateral characteristic size, and temperature. The modeling results are validated against experimental published work and full agreements are obtained. Several performance parameters are tuned to enhance the performance of these quantum photodetectors through the presented modeling. The resultant performance characteristics and comparison among both quantum well infrared photodetectors (QWIPs) and QRIPs are presented in this work. From the obtained results we notice that the total dark current in the QRIPs can be significantly lower than that in the QWIPs. Moreover, main features of the QRIPs such as the large gap between the induced photocurrent and dark current open the way for overcoming the problems of quantum dot infrared photodetectors (QDIPs). (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：320 / 335
页数：16
相关论文
共 23 条
[1]  
BHATTACHARYA P, 2005, APPL PHYS LETT, V86, P11063
[2]   High-performance mid-infrared quantum dot infrared photodetectors [J].
Chakrabarti, S ;
Stiff-Roberts, AD ;
Su, XH ;
Bhattacharya, P ;
Ariyawansa, G ;
Perera, AGU .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (13) :2135-2141
[3]   Novel quantum wire infrared photodetectors [J].
Das, B ;
Singaraju, P .
INFRARED PHYSICS & TECHNOLOGY, 2005, 46 (03) :209-218
[4]   FABRICATION OF MAGNETIC QUANTUM WIRES BY STEP-FLOW GROWTH OF COBALT ON COPPER SURFACES [J].
DELAFIGUERA, J ;
HUERTAGARNICA, MA ;
PRIETO, JE ;
OCAL, C ;
MIRANDA, R .
APPLIED PHYSICS LETTERS, 1995, 66 (08) :1006-1008
[5]  
EGGERT S, 2007, ARXIV07080003V2CONDM
[6]  
El Mashade MB, 2003, SEMICOND SCI TECH, V18, P891, DOI 10.1088/0268-1242/18/9/314
[7]   A modulation-doped longwave infrared quantum dot photodetector with high photoresponsivity [J].
Lu, Xuejun ;
Vaillancourt, Jarrod ;
Meisner, Mark J. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (09) :993-996
[8]   Performance improvement of quantum dot infrared photodetectors through modeling [J].
Mahmoud, Imbaby I. ;
Konber, Hussien A. ;
El Tokhy, Mohamed S. .
OPTICS AND LASER TECHNOLOGY, 2010, 42 (08) :1240-1249
[9]   Block diagram modeling of quantum laser sources [J].
Mahmoud, Imbaby I. ;
El Tokhy, Mohamed S. ;
El Mashade, Mohamed B. .
OPTICS AND LASER TECHNOLOGY, 2010, 42 (03) :509-521
[10]  
NASER MA, 2008, P 214 ECS M HON HI 1
123