Influence of Ion Bombardment on Electron Emission of MgO Surface in AC Plasma Display Panel

被引:16
作者
Park, Choon-Sang [1 ]
Tae, Heung-Sik [1 ]
Jung, Eun-Young [2 ]
Seo, Jeong Hyun [3 ]
Shin, Bhum Jae [4 ]
机构
[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea
[2] Samsung SDI Co Ltd, Core Technol Lab, Corp R&D Ctr, Cheonan 330300, South Korea
[3] Univ Incheon, Dept Elect Engn, Inchon 402751, South Korea
[4] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea
关键词
Cathodoluminescence (CL); electron emission; formative address delay time; ion bombardment; statistical address delay time; wall voltage variation; BOUNDARY IMAGE STICKING; CENTERS; F+;
D O I
10.1109/TPS.2010.2053560
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The influence of ion bombardment during a sustain discharge on the electron emission of the MgO surface and related driving characteristics of an ac plasma display panel were examined using the cathodoluminescence technique and SIMS analysis. The experimental results showed that severe ion bombardment predominantly sputtered Mg species from the MgO surface, thereby lowering the intensity of the F+ center peak to 3.2 eV due to the elimination of the oxygen vacancy and finally increasing the formative address delay time (T-f) due to an aggravated electron emission capability. Meanwhile, severe ion bombardment also destroyed the shallow trap level, thereby lowering the intensity of the shallow peak to 1.85 eV and eventually increasing the statistical address delay time (T-s) due to a poor electron emission capability from the shallow level. Finally, the aggravated electron emission capability from the shallow level resulted in a reduced wall voltage variation during the address period.
引用
收藏
页码:2439 / 2444
页数:6
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