Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor

被引：16

作者：

Chek, Desmond C. Y. ^{[1
]}

Tan, Michael L. P. ^{[1
,2
]}

Ahmadi, Mohammad Taghi ^{[1
]}

Ismail, Razali ^{[1
]}

Arora, Vijay K. ^{[1
,3
]}

机构：

[1] Univ Teknol Malaysia, Fac Elect Engn, Skudai 81310, Johor, Malaysia

[2] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England

[3] Wilkes Univ, Div Engn & Phys, Wilkes Barre, PA 18766 USA

来源：

MICROELECTRONICS JOURNAL | 2010年 / 41卷 / 09期

关键词：

Carbon nanotube; Analytical device modeling; 80 nm CNFET; Low mobility; High mobility; Inverter; SPICE; DEVICE;

D O I：

10.1016/j.mejo.2010.05.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel analytical modeling of a zigzag single-walled semiconducting carbon nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top-of-a-potential barrier approach. By implementing multimode carrier transport, we explore and compare the performance of a low- (360 cm(2)/Vs) and high-mobility (7200 cm(2)/Vs) CNFET model with experimental data from nanotube and 45 nm MOSFET, respectively, as well as existing compact models Mobility and carrier concentration models are also developed to obtain a good matching with physical data For a high mobility CNFET. we found that a maximum of 120 mu A is obtained In addition to this, a CNT-based inverter is also developed by constructing n-type and p-type CNFET in ORCAD's analog behavioral model (ABM) A gain of as high as 5.2 is forecasted for an Inverter of 80 nm CNFET (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：579 / 584

页数：6