Changes of Magnetic Anisotropy of CoPtCr Perpendicular Films Due to Ru Intermediate Layer Under High Gas Pressure

被引：4

作者：

Xia, Weixing ^{[1
]}

Xiao, Chuntao ^{[2
]}

Shindo, Daisuke ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

[2] Lanzhou Univ, Key lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2010年 / 46卷 / 10期

关键词：

Magnetic anisotropy; magnetic films; magnetic recording; MEDIA; MICROSTRUCTURE;

D O I：

10.1109/TMAG.2010.2051449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The uniaxial magnetic anisotropy K-u of CoPtCr-SiO2 granular perpendicular recording media increases when they are deposited on a Ru intermediate layer with high Ar gas pressure. In order to clarify the reason for the increase in K-u, we investigated the correlation between K-u of continuous CoPtCr film and the Ar gas pressure of the Ru layer. Six kinds of CoPtCr films with the compositions close to practical CoPtCr-SiO2 recording media were deposited on the Ru layer with the Ar gas pressure varying from 0.6 to 8.0 Pa. The increase in K-u of continuous CoPtCr films was confirmed. Through the investigation on microstructure using X-ray diffraction, we found that the stacking faults or the fraction of face center cubic (FCC) phase of CoPtCr grains were independent on the gas pressure of Ru while the ratio of hexagonal close packed (HCP) crystal constant c/a monotonously decreased with increasing gas pressure. We conclude that the increase in K-u of CoPtCr continuous film is mostly related to the decease of c/a due to high gas pressure of Ru layer.

引用

页码：3711 / 3714

页数：4