Stacked Two-Dimensional MXene Composites for an Energy-Efficient Memory and Digital Comparator

被引:36
作者
Guo, Liangchao [1 ]
Mu, Boyuan [1 ]
Li, Ming-Zheng [2 ]
Yang, Baidong [1 ]
Chen, Ruo-Si [1 ]
Ding, Guanglong [2 ]
Zhou, Kui [2 ]
Liu, Yanhua [3 ]
Kuo, Chi-Ching [4 ]
Han, Su-Ting [1 ]
Zhou, Ye [1 ,2 ]
机构
[1] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
[3] Shanghai Inst Space Power Sources, Shanghai 200245, Peoples R China
[4] Natl Taipei Univ Technol, Inst Organ & Polymer Mat, Res & Dev Ctr Smart Text Technol, Taipei 10608, Taiwan
基金
中国国家自然科学基金;
关键词
memory; 2D MXene; oxygen adsorption; RRAMs; digital comparator; BOOLEAN LOGIC; GRAPHENE; REALIZATION; TRANSISTORS; ELECTRODES;
D O I
10.1021/acsami.1c11014
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene-TiO2 nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.
引用
收藏
页码:39595 / 39605
页数:11
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