共 68 条
[1]
High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient
[J].
Aziz, Tariq
;
Wei, Shijing
;
Sun, Yun
;
Ma, Lai-Peng
;
Pei, Songfeng
;
Dong, Shichao
;
Ren, Wencai
;
Liu, Qi
;
Cheng, Hui-Ming
;
Sun, Dong-Ming
.
NANOSCALE,
2021, 13 (04)
:2448-2455

论文数: 引用数:
h-index:
机构:

Wei, Shijing
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
Henan Univ, Key Lab Photovolta Mat, 1 Jinming Rd, Kalfeng 475004, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

Sun, Yun
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

Ma, Lai-Peng
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

Pei, Songfeng
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

Dong, Shichao
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

Ren, Wencai
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

Liu, Qi
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Frontier Inst Chip & Syst, 2005 Shonghu Rd, Shanghai 200433, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

Cheng, Hui-Ming
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

Sun, Dong-Ming
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
[2]
Quantized Conduction Device with 6-Bit Storage Based on Electrically Controllable Break Junctions
[J].
Banerjee, Writam
;
Hwang, Hyunsang
.
ADVANCED ELECTRONIC MATERIALS,
2019, 5 (12)

论文数: 引用数:
h-index:
机构:

Hwang, Hyunsang
论文数: 0 引用数: 0
h-index: 0
机构:
Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Ctr Single Atom Based Semicond Device, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Ctr Single Atom Based Semicond Device, Pohang 790784, South Korea
[3]
Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM
[J].
Banerjee, Writam
;
Cai, Wu Fa
;
Zhao, Xiaolong
;
Liu, Qi
;
Lv, Hangbing
;
Long, Shibing
;
Liu, Ming
.
NANOSCALE,
2017, 9 (47)
:18908-18917

Banerjee, Writam
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China
Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China

Cai, Wu Fa
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China
Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China

Zhao, Xiaolong
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China
Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China

Liu, Qi
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China
Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China

Lv, Hangbing
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China
Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China

Long, Shibing
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China
Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China

Liu, Ming
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China
Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, 3 BeiTuCheng West Rd, Beijing 100029, Peoples R China
[4]
'Memristive' switches enable 'stateful' logic operations via material implication
[J].
Borghetti, Julien
;
Snider, Gregory S.
;
Kuekes, Philip J.
;
Yang, J. Joshua
;
Stewart, Duncan R.
;
Williams, R. Stanley
.
NATURE,
2010, 464 (7290)
:873-876

Borghetti, Julien
论文数: 0 引用数: 0
h-index: 0
机构:
Hewlett Packard Labs, Palo Alto, CA 94304 USA Hewlett Packard Labs, Palo Alto, CA 94304 USA

Snider, Gregory S.
论文数: 0 引用数: 0
h-index: 0
机构:
Hewlett Packard Labs, Palo Alto, CA 94304 USA Hewlett Packard Labs, Palo Alto, CA 94304 USA

Kuekes, Philip J.
论文数: 0 引用数: 0
h-index: 0
机构:
Hewlett Packard Labs, Palo Alto, CA 94304 USA Hewlett Packard Labs, Palo Alto, CA 94304 USA

Yang, J. Joshua
论文数: 0 引用数: 0
h-index: 0
机构:
Hewlett Packard Labs, Palo Alto, CA 94304 USA Hewlett Packard Labs, Palo Alto, CA 94304 USA

Stewart, Duncan R.
论文数: 0 引用数: 0
h-index: 0
机构:
Hewlett Packard Labs, Palo Alto, CA 94304 USA Hewlett Packard Labs, Palo Alto, CA 94304 USA

Williams, R. Stanley
论文数: 0 引用数: 0
h-index: 0
机构:
Hewlett Packard Labs, Palo Alto, CA 94304 USA Hewlett Packard Labs, Palo Alto, CA 94304 USA
[5]
Enhanced mobility of poly(3-hexylthiophene) transistors by spin-coating from high-boiling-point solvents
[J].
Chang, JF
;
Sun, BQ
;
Breiby, DW
;
Nielsen, MM
;
Sölling, TI
;
Giles, M
;
McCulloch, I
;
Sirringhaus, H
.
CHEMISTRY OF MATERIALS,
2004, 16 (23)
:4772-4776

Chang, JF
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Sun, BQ
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Breiby, DW
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Nielsen, MM
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Sölling, TI
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Giles, M
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

McCulloch, I
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Sirringhaus, H
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[6]
Resistance random access memory
[J].
Chang, Ting-Chang
;
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Chu, Tian-Jian
;
Sze, Simon M.
.
MATERIALS TODAY,
2016, 19 (05)
:254-264

Chang, Ting-Chang
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

Chang, Kuan-Chang
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

Tsai, Tsung-Ming
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

Chu, Tian-Jian
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

Sze, Simon M.
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan
[7]
First-principles study of point defects in rutile TiO2-x
[J].
Cho, Eunae
;
Han, Seungwu
;
Ahn, Hyo-Shin
;
Lee, Kwang-Ryeol
;
Kim, Seong Keun
;
Hwang, Cheol Seong
.
PHYSICAL REVIEW B,
2006, 73 (19)

Cho, Eunae
论文数: 0 引用数: 0
h-index: 0
机构: Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

Han, Seungwu
论文数: 0 引用数: 0
h-index: 0
机构:
Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

Ahn, Hyo-Shin
论文数: 0 引用数: 0
h-index: 0
机构: Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

Lee, Kwang-Ryeol
论文数: 0 引用数: 0
h-index: 0
机构: Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

Kim, Seong Keun
论文数: 0 引用数: 0
h-index: 0
机构: Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

Hwang, Cheol Seong
论文数: 0 引用数: 0
h-index: 0
机构: Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[8]
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
[J].
Choi, BJ
;
Jeong, DS
;
Kim, SK
;
Rohde, C
;
Choi, S
;
Oh, JH
;
Kim, HJ
;
Hwang, CS
;
Szot, K
;
Waser, R
;
Reichenberg, B
;
Tiedke, S
.
JOURNAL OF APPLIED PHYSICS,
2005, 98 (03)

Choi, BJ
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Jeong, DS
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Kim, SK
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Rohde, C
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Choi, S
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Oh, JH
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Kim, HJ
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Hwang, CS
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Szot, K
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Waser, R
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Reichenberg, B
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

Tiedke, S
论文数: 0 引用数: 0
h-index: 0
机构: Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[9]
Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching
[J].
Choi, Jaeho
;
Park, Sunghak
;
Lee, Joohee
;
Hong, Kootak
;
Kim, Do-Hong
;
Moon, Cheon Woo
;
Park, Gyeong Do
;
Suh, Junmin
;
Hwang, Jinyeon
;
Kim, Soo Young
;
Jung, Hyun Suk
;
Park, Nam-Gyu
;
Han, Seungwu
;
Nam, Ki Tae
;
Jang, Ho Won
.
ADVANCED MATERIALS,
2016, 28 (31)
:6562-+

Choi, Jaeho
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Park, Sunghak
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Lee, Joohee
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Hong, Kootak
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Kim, Do-Hong
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Moon, Cheon Woo
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Park, Gyeong Do
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Suh, Junmin
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Hwang, Jinyeon
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

论文数: 引用数:
h-index:
机构:

Jung, Hyun Suk
论文数: 0 引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Park, Nam-Gyu
论文数: 0 引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ, Sch Chem Engn, Suwon 16419, South Korea
Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Han, Seungwu
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Nam, Ki Tae
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

Jang, Ho Won
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[10]
Two-Dimensional van der Waals Materials with Aligned In-Plane Polarization and Large Piezoelectric Effect for Self-Powered Piezoelectric Sensors
[J].
Dai, Mingjin
;
Wang, Zhiguo
;
Wang, Fakun
;
Qiu, Yunfeng
;
Zhang, Jia
;
Xu, Cheng-Yan
;
Zhai, Tianyou
;
Cao, Wenwu
;
Fu, Yongqing
;
Jia, Dechang
;
Zhou, Yu
;
Hu, Ping-An
.
NANO LETTERS,
2019, 19 (08)
:5410-5416

Dai, Mingjin
论文数: 0 引用数: 0
h-index: 0
机构:
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China
Harbin Inst Technol, MOE Key Lab Microsyst & Microstruct Mfg, Harbin 150001, Heilongjiang, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Wang, Zhiguo
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Sichuan, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Wang, Fakun
论文数: 0 引用数: 0
h-index: 0
机构:
Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Qiu, Yunfeng
论文数: 0 引用数: 0
h-index: 0
机构:
Harbin Inst Technol, MOE Key Lab Microsyst & Microstruct Mfg, Harbin 150001, Heilongjiang, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Zhang, Jia
论文数: 0 引用数: 0
h-index: 0
机构:
Harbin Inst Technol, MOE Key Lab Microsyst & Microstruct Mfg, Harbin 150001, Heilongjiang, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Xu, Cheng-Yan
论文数: 0 引用数: 0
h-index: 0
机构:
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China
Harbin Inst Technol, MOE Key Lab Microsyst & Microstruct Mfg, Harbin 150001, Heilongjiang, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Zhai, Tianyou
论文数: 0 引用数: 0
h-index: 0
机构:
Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Cao, Wenwu
论文数: 0 引用数: 0
h-index: 0
机构:
Penn State Univ, Dept Math, University Pk, PA 16802 USA
Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Fu, Yongqing
论文数: 0 引用数: 0
h-index: 0
机构:
Northumbria Univ, Fac Engn & Environm, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Jia, Dechang
论文数: 0 引用数: 0
h-index: 0
机构:
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Zhou, Yu
论文数: 0 引用数: 0
h-index: 0
机构:
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China

Hu, Ping-An
论文数: 0 引用数: 0
h-index: 0
机构:
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China
Harbin Inst Technol, MOE Key Lab Microsyst & Microstruct Mfg, Harbin 150001, Heilongjiang, Peoples R China Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China