Fractional Talbot lithography with extreme ultraviolet light

被引:19
作者
Kim, Hyun-su [1 ,2 ,6 ]
Li, Wei [4 ,5 ]
Danylyuk, Serhiy [2 ,3 ]
Brocklesby, William S. [6 ]
Marconi, Mario C. [4 ,5 ]
Juschkin, Larissa [1 ,2 ]
机构
[1] Rhein Westfal TH Aachen, Chair Expt Phys EUV, D-52074 Aachen, Germany
[2] JARA Fundamentals Future Informat Technol, D-52074 Aachen, Germany
[3] Rhein Westfal TH Aachen, Chair Technol Opt Syst, D-52074 Aachen, Germany
[4] Colorado State Univ, Engn Res Ctr Extreme Ultraviolet Sci & Technol, Ft Collins, CO 80523 USA
[5] Colorado State Univ, Dept Elect & Comp Engn, Ft Collins, CO 80523 USA
[6] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
关键词
TRANSMISSION; GRATINGS; LASER;
D O I
10.1364/OL.39.006969
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Fractional Talbot effect leads to the possibility to implement patterning of structures with smaller periods than the master mask. This is particularly attractive when using short wavelength illumination in the extreme ultraviolet because of attainable resolution in the sub-100-nm range. In this Letter, we demonstrate the Talbot lithography with the fractional Talbot effect under coherent illumination generated with a capillary discharge Ne-like Ar extreme ultraviolet laser. Various spatial frequency multiplications up to 5x are achieved using a parent grating. This technique allows a fabrication of nanostructures with high-resolution patterns, which is of high interest in many applications such as the manufacturing of plasmonic surfaces and photonic devices. (C) 2014 Optical Society of America
引用
收藏
页码:6969 / 6972
页数:4
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