Carbon nanotubes for interconnect applications

被引：127

作者：

Kreupl, F ^{[1
]}

Graham, AP ^{[1
]}

Liebau, M ^{[1
]}

Duesberg, GS ^{[1
]}

Seidel, R ^{[1
]}

Unger, E ^{[1
]}

机构：

[1] Infineon Technol AG, Corp Res, D-81739 Munich, Germany

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanombes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5(.)10(8) A/cm(2) and a resistance of 7.8 kOmega could be achieved for a single multi-walled CNT vertical interconnect.

引用

页码：683 / 686

页数：4

共 15 条

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