High-performance membrane mask for electron projection lithography

被引:22
作者
Yamashita, H
Amemiya, S
Nomura, E
Nakajima, K
Nozue, H
机构
[1] NEC Corp Ltd, ULSI Device Dev Lab, Sagamihara, Kanagawa 2291198, Japan
[2] HOYA Corp, R&D Ctr, Yamanashi 4088550, Japan
[3] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期
关键词
D O I
10.1116/1.1319829
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-performance membrane mask for electron projection lithography (EPL) systems is proposed. The design and material selection of the mask described here were carefully executed by considering not only the lithographic performance but also various properties. The mask described in this article consists of a 600-nm-thick diamond-like carbon (DLC) scatter on a DLC membrane 30-60 nm thick. The optimum thicknesses are obtained by calculating angular distributions of the transmitted electrons by our in-house Monte Carlo simulator. It is expected to have an electron transmission of up to 80% and a beam contrast of 100% with an appropriate limiting aperture. A 1-mm-sq membrane of thickness of down to 30 nm could be successfully prepared. The high-performance membrane mask can obtain high resolution and high throughput of the EPL systems simultaneously. (C) 2000 American Vacuum Society. [S0734-211X(00)08306-2].
引用
收藏
页码:3237 / 3241
页数:5
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