Scintillation properties of LuAG:Ce single crystalline films grown by LPE method

被引：8

作者：

Prusa, Petr ^{[1
]}

Mares, Jiri A. ^{[1
]}

Nikl, Martin ^{[1
]}

Kucera, Miroslav ^{[2
]}

Nitsch, Karel ^{[1
]}

Hanus, Martin ^{[2
]}

机构：

[1] Inst Phys AS CR, Prague 16200, Czech Republic

[2] Charles Univ Prague, Fac Math & Phys, CR-12116 Prague 2, Czech Republic

来源：

OPTICAL MATERIALS | 2010年 / 32卷 / 10期

关键词：

LuAG:Ce; LPE method; Scintillation; Photoelectron yield; ENERGY-TRANSFER; YAG-CE; LUMINESCENCE; DETECTORS; DEFECTS;

D O I：

10.1016/j.optmat.2010.04.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lu3Al5O12:Ce (LuAG:Ce) thin films were grown from the PbO-B2O3 (PB) and BaO-B2O3-BaF2 (BBB) fluxes using the liquid phase epitaxy method (LPE). Photoelectron yield, its time dependence, and energy resolution were measured under a-particle excitation. A sample of the Czochralski grown bulk LuAG:Ce single crystal was measured as a reference. Photoelectron yield of the crystal was the best, followed by slightly inferior films grown from the BBB flux and still worse performing films grown from the PB flux. The samples grown from BBB flux and reference crystal exhibit the intense slow component in scintillation response. Relative energy resolution is indirectly proportional to photoelectron yield and varies from 9% to 28%. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, influence of alpha-particle energy deposition and substrate scintillation response are discussed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1360 / 1363

页数：4

共 25 条

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