Measurements and extractions of parasitic capacitances in ULSI layouts

被引:20
作者
Brambilla, A [1 ]
Maffezzoni, P
Bortesi, L
Vendrame, L
机构
[1] Politecn Milan, Dipartimento Elettr & Informaz, I-20133 Milan, Italy
[2] Cent Res & Dev, STMicroelect, I-20041 Agrate Brianza, Italy
关键词
floating random walk (FRW); interconnect characterization; parasitic capacitance;
D O I
10.1109/TED.2003.818150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper deals with the extraction of parasitic capacitances of interconnects in submicron layouts. It is well known that, in integrated circuits, the signal delay due to interconnects is comparable to that of gates. This aspect becomes particularly important, for example, during the design of clock trees in high-speed applications. In general, capacitance extraction is carried out with software tools but they should be validated on a set of geometrical structures, which have been accurately characterized and that are representative of the circuit layouts. Experimental characterization of these structures and their set up in a golden set of measures is still a challenging task. In this paper, we first describe some experimental approaches to measure capacitances of structures from the golden set and in particular we identify a high accuracy transducer based on pass-gate transistors. We then propose a software implementation of the floating random walk algorithm that solves the drawbacks in the extraction of capacitances of interconnects in a nonhomogeneous medium as an industrial layout. Finally, experimental and simulation results are presented, validating the adopted approach.
引用
收藏
页码:2236 / 2247
页数:12
相关论文
共 24 条
[1]  
BOGLIOLO A, 2002, P IEEE SIGN PROP INT, P75, DOI DOI 10.1109/SPI.2002.258287
[2]   A statistical algorithm for 3-D capacitance extraction [J].
Brambilla, A ;
Maffezzoni, P .
IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (08) :304-306
[3]   The challenge of signal integrity in deep-submicrometer CMOS technology [J].
Caignet, F ;
Delmas-Bendhia, S ;
Sicard, E .
PROCEEDINGS OF THE IEEE, 2001, 89 (04) :556-573
[4]   An on-chip, attofarad interconnect charge-based capacitance measurement (CBCM) technique [J].
Chen, JC ;
McGaughy, BW ;
Sylvester, D ;
Hu, CM .
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :69-72
[5]   AUTOMATIC-GENERATION OF ANALYTICAL MODELS FOR INTERCONNECT CAPACITANCES [J].
CHOUDHURY, U ;
SANGIOVANNIVINCENTELLI, A .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1995, 14 (04) :470-480
[6]  
Froment B., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P897, DOI 10.1109/IEDM.1999.824293
[7]  
Gregorian R., 1986, Analog MOS Integrated Circuits for Signal Processing
[8]  
JERE JN, 1993, IEEE T MICROW THEORY, P325
[9]   A STOCHASTIC ALGORITHM FOR HIGH-SPEED CAPACITANCE EXTRACTION IN INTEGRATED-CIRCUITS [J].
LECOZ, YL ;
IVERSON, RB .
SOLID-STATE ELECTRONICS, 1992, 35 (07) :1005-1012
[10]   On-chip characterization of interconnect parameters and time delay in 0.18 μm CMOS technology for ULSI circuit applications [J].
Lee, HD ;
Kim, DM ;
Jang, MJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (05) :1073-1079