Copper interconnects for semiconductor devices

被引：36

作者：

Merchant, SM ^{[1
]}

Kang, SH

Sanganeria, M

van Schravendijk, B

Mountsier, T

机构：

[1] Agere Syst, Orlando, FL 32819 USA

[2] Novellus Syst, San Jose, CA USA

来源：

JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY | 2001年 / 53卷 / 06期

关键词：

D O I：

10.1007/s11837-001-0103-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper/low-k dielectric materials have been rapidly replacing conventional aluminum-alloy/SiO2-based interconnects in today's semiconductor devices. This paper reviews the advantages of transitioning to copper/low-k interconnects. Materials and process challenges during the fabrication of devices with copper/low-k interconnects are discussed. Reliability concerns associated with such devices are highlighted.

引用

页码：43 / 48

页数：6

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