Mechanism of conversion and propagation of dislocations in 4H-SiC epilayer

被引：0
作者：
Miao, Ruixia [1 ]
Zhang, Yuming [1 ]
Zhang, Yimen [1 ]
Tang, Xiaoyan [1 ]
Gai, Qingfeng [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China
来源：
2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) | 2009年
基金：
中国国家自然科学基金;
关键词：
mechanism of conversion and propagation; dislocations; EPITAXIAL LAYER;
D O I：
10.1109/EDSSC.2009.5394256
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The elastic energies of four kinds of dislocations per unit growth length have been calculated. We propose that threading screw dislocations(TSDs) along < 0001 > can propagate into epilayer but can not convert to TEDs. We suggest that both basal plane mix dislocations(B(MD)s) and threading screw dislocations (B(TSD)s) can convert to TEDs, and B(MD)s convert to TEDs much easier than B(TSD)s in epilayer because of the higher elastic energy. Based on the experimental results, the relationship between the dislocation density and the conversion and propagation of dislocations is discussed.
引用
收藏
页码：298 / +
页数：2
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