Correspondence between sheet resistance and emitter profile of phoshorus diffused emitters from a spray-on dopant

被引：7

作者：

Bentzen, A ^{[1
]}

Holt, A ^{[1
]}

机构：

[1] Inst Energy Technol, Sect Renewable Energy, NO-2027 Kjeller, Norway

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488342

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The evolution of the emitter sheet resistance upon phosphorus in-diffusion from a spray-on dopant has been studied in the temperature range 840-990 degrees C. In complement with investigations of emitter diffusion profiles, by both electrochemical capacitance-voltage profiling and secondary ion mass spectrometry, we find that the sheet resistance is determined directly by the depth of the flat plateau near the surface in profiles of electrically active phosphorus. Thus, with respect to sheet resistance, an emitter can be regarded as a constant concentration abrupt box layer, with thickness and concentration specified by the flat plateau, irrespective of the actual profile at lower concentrations. Therefore, independent optimization of the emitter profile at lower concentrations is enabled.

引用

页码：1153 / 1156

页数：4

共 8 条

[1]

Bentzen A., 2004, P 19 EUR PHOT SOL EN, P935

[2] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[3]

MASETTI G, 1977, SEMICONDUCTOR SILICO, P648

[4] ANODIC-DISSOLUTION DURING ELECTROCHEMICAL CARRIER-CONCENTRATION PROFILING OF SILICON [J].

PEINER, E ;

SCHLACHETZKI, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (02) :552-557

[5] Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates [J].

Solmi, S ;

Parisini, A ;

Angelucci, R ;

Armigliato, A ;

Nobili, D ;

Moro, L .

PHYSICAL REVIEW B, 1996, 53 (12) :7836-7841

[6] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].

SZE, SM ;

IRVIN, JC .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&

[7] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].

TANNENBAUM, E .

SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132

[8] SHALLOW PHOSPHORUS DIFFUSION PROFILES IN SILICON [J].

TSAI, JCC .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1499-&

← 1 →