Preparation of (001)-oriented Pb(Zr,Ti)O3 thin films and their piezoelectric applications

被引：57

作者：

Fujii, Eiji ^{[1
]}

Takayama, Ryoichi ^{[1
]}

Nomura, Kouji ^{[1
]}

Murata, Akiko ^{[1
]}

Hirasawa, Taku ^{[1
]}

Tomozawa, Atsushi ^{[1
]}

Fujii, Satoru ^{[1
]}

Kamada, Takeshi ^{[1
]}

Torii, Hideo ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Adv Devices Dev Ctr, Moriguchi, Osaka 5708501, Japan

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2007年 / 54卷 / 12期

关键词：

D O I：

10.1109/TUFFC.2007.556

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

Preparation of (001)-oriented Pb(Zr,Ti)O-3 (PZT) thin films and their applications to a sensor and actuators were investigated. These thin films, which have a composition close to the morphotropic phase boundary, were epitaxially grown on (100)MgO single-crystal substrates by RIP magnetron sputtering. These (001)-oriented PZT thin films could be obtained on various kinds of substrates, such as glass and Si, by introducing (100)-oriented MgO buffer layers. In addition, the (001)-oriented PZT thin films could be obtained on Si substrates without buffer layers by optimizing the sputtering conditions. All of these thin films showed excellent piezoelectric properties without the need for poling treatment. The PZT thin films on the MgO substrates had a high piezoelectric coefficient, d(31), Of -100 pm/V, and an extremely low relative dielectric constant, E,, of 240. The PZT thin films on Si substrate had a very high d(31) Of -150 PM/V and an epsilon(r) = 700. These PZT thin films were applied to an angular rate sensor with a tuning fork in a car navigation system, to a dual-stage actuator for positioning the magnetic head of a high-density hard disk drive, and to an actuator for an inkjet printer head for industrial on-demand printers.

引用

页码：2431 / 2438

页数：8

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