An Experimental Investigation on High Voltage GaAs Photoconductive Semiconductor Switch

被引：0
|
作者：
Yang, Chia-En [1 ]
Yao, Jimmy [1 ]
Chang, Yun-Ching [1 ]
Yin, Shizhuo [1 ]
机构：
[1] Penn State Univ, University Pk, PA 16802 USA
来源：
PHOTONIC FIBER AND CRYSTAL DEVICES: ADVANCES IN MATERIALS AND INNOVATIONS IN DEVICE APPLICATIONS IV | 2010年 / 7781卷
关键词：
Photoconductive switch; DC bias; low temperature grown MBE GaAs; MESFETS; MBE;
D O I：
10.1117/12.862144
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present the design and the fabrication method for high DC bias voltage photoconductive semiconductor switch (PCSS). By employing a low temperature grown molecular beam epitaxial GaAs (LT-MBE GaAs) and a proper protection coating to prevent air breakdown, the DC bias electric field can be significantly increased. Such a PCSS structure can effectively achieve a low DC dark current in a high voltage pulse generation system with smaller PCSS sizes. DC bias capability also eliminates the need of complicated synchronization. The application of high DC bias field PCSS will also be discussed.
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页数：8
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