Local charge accumulation and trapping in grain boundaries of pentacene thin film transistors

被引：34
|
作者：
Yogev, S. [1 ]
Matsubara, R. [2 ]
Nakamura, M. [2 ]
Rosenwaks, Y. [1 ]
机构：
[1] Tel Aviv Univ, Sch Elect Engn, IL-69978 Tel Aviv, Israel
[2] Chiba Univ, Dept Elect & Elect Engn, Chiba 2638522, Japan
来源：
ORGANIC ELECTRONICS | 2010年 / 11卷 / 11期
关键词：
Pentacene; Grain boundaries; Organic thin film transistors; Hole accumulation; FIELD-EFFECT TRANSISTORS; ELECTRICAL CHARACTERISTICS;
D O I：
10.1016/j.orgel.2010.07.021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a comprehensive Kelvin probe force microscopy study of grain boundaries in pentacene transistors with different film thicknesses in combination with current-voltage measurements and 3D electrostatics simulations. It is found that in pentacene films thinner than approximately 30 nm, holes are accumulated in the grain boundaries due to negative trapped charge at the SiO2-pentacene interface. On the other hand, in thicker films we observe hole depletion near the boundaries mainly due to positive charge trapping in the grain boundaries. The results are discussed in view of their effect on pentacene thin film transistors performance. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1729 / 1735
页数：7
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