Influences of semiconductor oxide fillers on the corrosion behavior of metals under coatings

被引：12

作者：

Li, Sijia ^{[1
]}

Sun, Wen ^{[1
]}

Yang, Zhengqing ^{[1
]}

Zhang, Xinyu ^{[1
]}

Wang, Lida ^{[1
]}

Liu, Guichang ^{[1
]}

机构：

[1] Dalian Univ Technol, Dept Mat Sci & Chem Engn, 2 Linggong Rd, Dalian 116024, Peoples R China

来源：

ELECTROCHIMICA ACTA | 2018年 / 292卷

基金：

中国博士后科学基金; 国家重点研发计划; 中国国家自然科学基金;

关键词：

Organic coatings; Semiconductor oxide; Localized EIS; Work function; ELECTROCHEMICAL NOISE-ANALYSIS; WAVELET TRANSFORM; PITTING CORROSION; MAGNESIUM ALLOY; STEEL; INTERFACES; STABILITY; LAYERS; IRON;

D O I：

10.1016/j.electacta.2018.08.116

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Semiconductor oxides are widely used as coating fillers, while few studies have focused on the interactions between semiconductor fillers and metal substrates. In this paper, common semiconductor fillers including TiO2, Fe2O3 and Cu2O were prepared and incorporated into polyvinyl butyral coatings. Localized EIS, EIS, SEM and electrochemical noise analysis were applied to study the corrosion behavior of semiconductor/metal contacts at coating defects. Results revealed that TiO2 and Fe2O3 accelerated the corrosion of metals, while Cu2O showed no promising effect. Meanwhile, a micro-galvanic corrosion mechanism based on work function difference and oxygen reduction reaction activity was proposed to explain the corrosion-promotion phenomenon. (C) 2018 Elsevier Ltd. All rights reserved.

引用

页码：425 / 434

页数：10

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