CuInO2 epitaxial thin films on epi-GaN wafer: Fabrication and solar-blind photodetector

被引：6

作者：

Feng, Bo ^{[1
]}

Lv, Haiyuan ^{[1
]}

Liu, Jie ^{[1
]}

Chen, Rongrong ^{[1
]}

Zhu, Hongyan ^{[1
]}

Han, Xinyu ^{[1
]}

Luan, Caina ^{[1
]}

Xiao, Hongdi ^{[1
]}

机构：

[1] Shandong Univ, Sch Microelect, Jinan 250101, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2022年 / 604卷

基金：

中国国家自然科学基金;

关键词：

CuInO2; Epitaxial thin film; Oxygen pressure; epi-GaN; Photodetector; ELECTRICAL-CONDUCTION; GROWTH; OXIDE; CUGAO2; DEPOSITION;

D O I：

10.1016/j.apsusc.2022.154505

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-quality p-type CuInO2 epitaxial thin films with a bandgap of similar to 3.99 eV were grown on epitaxial GaN (001) (epi-GaN) wafers by using pulsed laser deposition technology. At a constant growth temperature of 750 degrees C, the quality of the CuInO2 thin film increases with the decrease in oxygen pressure within the range of 0.09-1 Pa. For the single crystal film obtained at 0.09 Pa, the epitaxial relationship between the film and the substrate is determined to be CuInO2 (001) parallel to GaN (001) with CuInO2 < 1 0 0 > parallel to GaN [1 0 0]. The self-powered ultraviolet photodetector prepared based on the highest quality film shows high photoresponsivity 0.31 mA/W and fast response speed (rise time: 0.34 s, decay time: 0.34 s) at zero voltage under 254-nm UV-light, meaning good solar-blind photoresponsivity.

引用

页数：8

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