Modeling of Trapping Effects in GaN HEMTs

被引：0
|
作者：
Agnihotri, Shantanu [1 ]
Ghosh, Sudip [1 ]
Dasgupta, Avirup [1 ]
Ahsan, Sheikh Aamir [1 ]
Khandelwal, Sourabh [2 ]
Chauhan, Yogesh Singh [1 ]
机构：
[1] Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA USA
来源：
2015 ANNUAL IEEE INDIA CONFERENCE (INDICON) | 2015年
关键词：
Trapping; Switching Collapse; Current Collapse; GaN HEMT;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this work, we study the trapping in GaN power HEMTs and discuss effect of traps on device characteristics. Simulation setups for analysis of switching collapse and current collapse observed in pulsed I-V are also presented. We propose an RC network based trap model to capture the effect of trapping in a surface potential based compact model for GaN HEMTs. The proposed model has been verified with the hardware data for various quiescent biases and frequencies, and the model results are in excellent agreement with the hardware data.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects
    Jarndal, Anwar
    Ghannouchi, Fadhel M.
    SOLID-STATE ELECTRONICS, 2016, 123 : 19 - 25
  • [2] An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs
    Ye, Ran
    Cai, Xiaolong
    Du, Chenglin
    Liu, Haijun
    Zhang, Yu
    Duan, Xiangyang
    Zhu, Jiejie
    IEEE ACCESS, 2022, 10 : 21759 - 21773
  • [3] Ron Increase in GaN HEMTs - Temperature or Trapping Effects
    Boecker, Jan
    Kuring, Carsten
    Tannhaeuser, Marvin
    Dieckerhoff, Sibylle
    2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 1975 - 1981
  • [4] Trapping Effects on Leakage and Current Collapse in AlGaN/GaN HEMTs
    Sharma, Niketa
    Periasamy, C.
    Chaturvedi, Nitin
    Chaturvedi, Nidhi
    JOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (10) : 5687 - 5697
  • [5] Trapping Effects on Leakage and Current Collapse in AlGaN/GaN HEMTs
    Niketa Sharma
    C. Periasamy
    Nitin Chaturvedi
    Nidhi Chaturvedi
    Journal of Electronic Materials, 2020, 49 : 5687 - 5697
  • [6] Trapping effects and microwave power performance in AlGaN/GaN HEMTs
    Binari, SC
    Ikossi, K
    Roussos, JA
    Kruppa, W
    Park, D
    Dietrich, HB
    Koleske, DD
    Wickenden, AE
    Henry, RL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) : 465 - 471
  • [7] Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs
    Shanbhag, Ajay
    Sruthi, M. P.
    Chakravorty, Anjan
    DasGupta, Nandita
    DasGupta, Amitava
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (03) : 999 - 1005
  • [8] Modeling of Short-Channel Effects in GaN HEMTs
    Allaei, Mojtaba
    Shalchian, Majid
    Jazaeri, Farzan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3088 - 3094
  • [9] Characterization of Trapping and Thermal Dispersion in GaN HEMTs
    Albahrani, Sayed A.
    Parker, Anthony E.
    2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, : 413 - 416
  • [10] Modeling Reliability in GaN HEMTs
    Vasileska, Dragica
    2013 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IRW), 2013, : 32 - 37
12345