共 32 条
In-Situ Investigation of the Gate Bias Instability of Tungsten-Doped Indium Zinc Oxide Thin Film Transistor by Simultaneous Ultraviolet and Thermal Treatment
被引:3
作者:

Kim, Min Jung
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Dongguk Univ, Dept Phys & Semicond, Seoul 100715, South Korea Dongguk Univ, Dept Phys & Semicond, Seoul 100715, South Korea

Park, Hyun-Woo
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Dongguk Univ, Dept Phys & Semicond, Seoul 100715, South Korea
LG Display, Paju 413779, South Korea Dongguk Univ, Dept Phys & Semicond, Seoul 100715, South Korea

Jeong, Kwangsik
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Dongguk Univ, Dept Phys & Semicond, Seoul 100715, South Korea Dongguk Univ, Dept Phys & Semicond, Seoul 100715, South Korea

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h-index:
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机构:
[1] Dongguk Univ, Dept Phys & Semicond, Seoul 100715, South Korea
[2] LG Display, Paju 413779, South Korea
基金:
新加坡国家研究基金会;
关键词:
In-situ analysis;
simultaneous ultraviolet and thermal treatment (SUT);
thin-film transistor (TFT);
tungsten-doped indium zinc oxide;
ZN-O;
PERFORMANCE;
EXTRACTION;
D O I:
10.1109/TED.2021.3090737
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Simultaneous ultraviolet and thermal treatments (SUTs) enhanced the stability of tungsten-doped indium zinc oxide (W-IZO) thin-film transistor (TFT) compared to the furnace-annealed W-IZO TFT. To understand the change in electrical device instability, we used the in-situ measurement under the gate bias stress to investigate the electronic structure of active layer in actual TFT device. The physical properties of the active layer in the actual TFT structure, such as the unoccupied states in the conduction band and the band edge states below the conduction band, are related to the defect states of the oxide material and show the behavior of charge trapping. Improvement of the device stability mainly comes about from dynamic changes in the electron trap site in the channel region. The in-situ analysis, the relative conduction band area, and the band edge states for SUT-treated W-IZO active layer are much less changed under the gate bias stress than the furnace annealed W-IZO active layer.
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页码:3851 / 3856
页数:6
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共 32 条
[1]
Effects of additive gases and plasma post-treatment on electrical properties and optical transmittance of ZnO thin films
[J].
Bang, Jung-Hwan
;
Uhm, Hyun-Seok
;
Kim, Won
;
Park, Jin-Seok
.
THIN SOLID FILMS,
2010, 519 (05)
:1568-1572

Bang, Jung-Hwan
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Elect Control & Instrumentat Engn, Ansan 426791, Gyeonggi Do, South Korea Hanyang Univ, Dept Elect Elect Control & Instrumentat Engn, Ansan 426791, Gyeonggi Do, South Korea

Uhm, Hyun-Seok
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Elect Control & Instrumentat Engn, Ansan 426791, Gyeonggi Do, South Korea Hanyang Univ, Dept Elect Elect Control & Instrumentat Engn, Ansan 426791, Gyeonggi Do, South Korea

Kim, Won
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Elect Control & Instrumentat Engn, Ansan 426791, Gyeonggi Do, South Korea Hanyang Univ, Dept Elect Elect Control & Instrumentat Engn, Ansan 426791, Gyeonggi Do, South Korea

Park, Jin-Seok
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Elect Control & Instrumentat Engn, Ansan 426791, Gyeonggi Do, South Korea Hanyang Univ, Dept Elect Elect Control & Instrumentat Engn, Ansan 426791, Gyeonggi Do, South Korea
[2]
Transparent and flexible amorphous InZnAlO films grown by roll-to-roll sputtering for acidic buffer-free flexible organic solar cells
[J].
Cho, Da-Young
;
Kim, Ki-Hyun
;
Kim, Tae-Woong
;
Noh, Yong-Jin
;
Na, Seok-In
;
Chung, Kwun-Bum
;
Kim, Han-Ki
.
ORGANIC ELECTRONICS,
2015, 24
:227-233

Cho, Da-Young
论文数: 0 引用数: 0
h-index: 0
机构:
Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea

Kim, Ki-Hyun
论文数: 0 引用数: 0
h-index: 0
机构:
OLED R&D Ctr, Samsung Display, Yongin 446711, Gyeonggi Do, South Korea Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea

Kim, Tae-Woong
论文数: 0 引用数: 0
h-index: 0
机构:
OLED R&D Ctr, Samsung Display, Yongin 446711, Gyeonggi Do, South Korea Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea

Noh, Yong-Jin
论文数: 0 引用数: 0
h-index: 0
机构:
Chonbuk Natl Univ, Profess Grad Sch Flexible & Printable Elect, Jeonju Si 561756, Jeollabuk Do, South Korea Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea

Na, Seok-In
论文数: 0 引用数: 0
h-index: 0
机构:
Chonbuk Natl Univ, Profess Grad Sch Flexible & Printable Elect, Jeonju Si 561756, Jeollabuk Do, South Korea Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea

论文数: 引用数:
h-index:
机构:

Kim, Han-Ki
论文数: 0 引用数: 0
h-index: 0
机构:
Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
[3]
Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer
[J].
Cho, Min Hoe
;
Seol, Hyunju
;
Song, Aeran
;
Choi, Seonjun
;
Song, Yunheub
;
Yun, Pil Sang
;
Chung, Kwun-Bum
;
Bae, Jong Uk
;
Park, Kwon-Shik
;
Jeong, Jae Kyeong
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
2019, 66 (04)
:1783-1788

Cho, Min Hoe
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

Seol, Hyunju
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

Song, Aeran
论文数: 0 引用数: 0
h-index: 0
机构:
Dongguk Univ, Div Phys & Semiconductor Sci, Seoul 04620, South Korea Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

Choi, Seonjun
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

Song, Yunheub
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

Yun, Pil Sang
论文数: 0 引用数: 0
h-index: 0
机构:
LG Display Co, Res & Dev Ctr, Paju 413791, South Korea Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

论文数: 引用数:
h-index:
机构:

Bae, Jong Uk
论文数: 0 引用数: 0
h-index: 0
机构:
LG Display Co, Res & Dev Ctr, Paju 413791, South Korea Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

Park, Kwon-Shik
论文数: 0 引用数: 0
h-index: 0
机构:
LG Display Co, Res & Dev Ctr, Paju 413791, South Korea Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea

Jeong, Jae Kyeong
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
[4]
Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors
[J].
Chowdhury, Md Delwar Hossain
;
Migliorato, Piero
;
Jang, Jin
.
APPLIED PHYSICS LETTERS,
2010, 97 (17)

Chowdhury, Md Delwar Hossain
论文数: 0 引用数: 0
h-index: 0
机构:
Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea

Migliorato, Piero
论文数: 0 引用数: 0
h-index: 0
机构:
Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea
Univ Cambridge, Elect Engn Div, Dept Engn, Cambridge CB3 0FA, England Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea

Jang, Jin
论文数: 0 引用数: 0
h-index: 0
机构:
Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea
[5]
Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry
[J].
Chung, K. B.
;
Long, J. P.
;
Seo, H.
;
Lucovsky, G.
;
Nordlund, D.
.
JOURNAL OF APPLIED PHYSICS,
2009, 106 (07)

Chung, K. B.
论文数: 0 引用数: 0
h-index: 0
机构:
Dankook Univ, Dept Phys, Cheonan 330714, South Korea Dankook Univ, Dept Phys, Cheonan 330714, South Korea

Long, J. P.
论文数: 0 引用数: 0
h-index: 0
机构:
N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA Dankook Univ, Dept Phys, Cheonan 330714, South Korea

Seo, H.
论文数: 0 引用数: 0
h-index: 0
机构:
N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA Dankook Univ, Dept Phys, Cheonan 330714, South Korea

Lucovsky, G.
论文数: 0 引用数: 0
h-index: 0
机构:
N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA Dankook Univ, Dept Phys, Cheonan 330714, South Korea

Nordlund, D.
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA Dankook Univ, Dept Phys, Cheonan 330714, South Korea
[6]
Investigating the stability of zinc oxide thin film transistors
[J].
Cross, R. B. M.
;
De Souza, M. M.
.
APPLIED PHYSICS LETTERS,
2006, 89 (26)

Cross, R. B. M.
论文数: 0 引用数: 0
h-index: 0
机构:
De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England

De Souza, M. M.
论文数: 0 引用数: 0
h-index: 0
机构:
De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England
[7]
High field-effect mobility zinc oxide thin film transistors produced at room temperature
[J].
Fortunato, E
;
Pimentel, A
;
Pereira, L
;
Gonçalves, A
;
Lavareda, G
;
Aguas, H
;
Ferreira, I
;
Carvalho, CN
;
Martins, R
.
JOURNAL OF NON-CRYSTALLINE SOLIDS,
2004, 338
:806-809

Fortunato, E
论文数: 0 引用数: 0
h-index: 0
机构: Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

Pimentel, A
论文数: 0 引用数: 0
h-index: 0
机构: Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

Pereira, L
论文数: 0 引用数: 0
h-index: 0
机构: Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

Gonçalves, A
论文数: 0 引用数: 0
h-index: 0
机构: Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

Lavareda, G
论文数: 0 引用数: 0
h-index: 0
机构: Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

Aguas, H
论文数: 0 引用数: 0
h-index: 0
机构: Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

Ferreira, I
论文数: 0 引用数: 0
h-index: 0
机构: Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

Carvalho, CN
论文数: 0 引用数: 0
h-index: 0
机构: Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

Martins, R
论文数: 0 引用数: 0
h-index: 0
机构: Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal
[8]
Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
[J].
Fortunato, E.
;
Barquinha, P.
;
Martins, R.
.
ADVANCED MATERIALS,
2012, 24 (22)
:2945-2986

Fortunato, E.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nova Lisboa, CENIMAT I3N, Dept Ciencia Mat, Fac Ciencias & Tecnol,FCT, P-2829516 Caparica, Portugal
CEMOP UNINOVA, P-2829516 Caparica, Portugal Univ Nova Lisboa, CENIMAT I3N, Dept Ciencia Mat, Fac Ciencias & Tecnol,FCT, P-2829516 Caparica, Portugal

Barquinha, P.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nova Lisboa, CENIMAT I3N, Dept Ciencia Mat, Fac Ciencias & Tecnol,FCT, P-2829516 Caparica, Portugal
CEMOP UNINOVA, P-2829516 Caparica, Portugal Univ Nova Lisboa, CENIMAT I3N, Dept Ciencia Mat, Fac Ciencias & Tecnol,FCT, P-2829516 Caparica, Portugal

Martins, R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nova Lisboa, CENIMAT I3N, Dept Ciencia Mat, Fac Ciencias & Tecnol,FCT, P-2829516 Caparica, Portugal
CEMOP UNINOVA, P-2829516 Caparica, Portugal Univ Nova Lisboa, CENIMAT I3N, Dept Ciencia Mat, Fac Ciencias & Tecnol,FCT, P-2829516 Caparica, Portugal
[9]
High mobility indium free amorphous oxide thin film transistors
[J].
Fortunato, Elvira M. C.
;
Pereira, Lus M. N.
;
Barquinha, Pedro M. C.
;
do Rego, Ana M. Botelho
;
Goncalves, Goncalo
;
Vila, Anna
;
Morante, Juan R.
;
Martins, Rodrigo F. P.
.
APPLIED PHYSICS LETTERS,
2008, 92 (22)

Fortunato, Elvira M. C.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal
Univ Nova Lisboa, CEMOP UNINOVA, P-2829516 Caparica, Portugal Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal

Pereira, Lus M. N.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal
Univ Nova Lisboa, CEMOP UNINOVA, P-2829516 Caparica, Portugal Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal

Barquinha, Pedro M. C.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal
Univ Nova Lisboa, CEMOP UNINOVA, P-2829516 Caparica, Portugal Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal

do Rego, Ana M. Botelho
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tecn Lisboa, IST, CQFM, P-1040001 Lisbon, Portugal Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal

Goncalves, Goncalo
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal
Univ Nova Lisboa, CEMOP UNINOVA, P-2829516 Caparica, Portugal Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal

Vila, Anna
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Barcelona, Fac Phys, Dept Elect, EME XaRMAE, E-08028 Barcelona, Spain Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal

Morante, Juan R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Barcelona, Fac Phys, Dept Elect, EME XaRMAE, E-08028 Barcelona, Spain Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal

Martins, Rodrigo F. P.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal
Univ Nova Lisboa, CEMOP UNINOVA, P-2829516 Caparica, Portugal Univ Nova Lisboa, Fac Sci & Technol, CENIMAT I3N, Dept Mat Sci, P-2829516 Caparica, Portugal
[10]
Scanning photoelectron microscope for nanoscale three-dimensional spatial-resolved electron spectroscopy for chemical analysis
[J].
Horiba, K.
;
Nakamura, Y.
;
Nagamura, N.
;
Toyoda, S.
;
Kumigashira, H.
;
Oshima, M.
;
Amemiya, K.
;
Senba, Y.
;
Ohashi, H.
.
REVIEW OF SCIENTIFIC INSTRUMENTS,
2011, 82 (11)

Horiba, K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan
Univ Tokyo, Synchrotron Radiat Res Org, Tokyo 1138656, Japan
Japan Sci & Technol Agcy JST, CREST, Tokyo 1020075, Japan Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan

Nakamura, Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan

Nagamura, N.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan

Toyoda, S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan

Kumigashira, H.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan
Univ Tokyo, Synchrotron Radiat Res Org, Tokyo 1138656, Japan
Japan Sci & Technol Agcy JST, Precursory Res Embryon Sci & Technol PRESTO, Kawaguchi, Saitama 3320012, Japan Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan

Oshima, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan
Univ Tokyo, Synchrotron Radiat Res Org, Tokyo 1138656, Japan
Japan Sci & Technol Agcy JST, CREST, Tokyo 1020075, Japan Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan

Amemiya, K.
论文数: 0 引用数: 0
h-index: 0
机构:
Japan Sci & Technol Agcy JST, CREST, Tokyo 1020075, Japan
High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, Photon Factory, Tsukuba, Ibaraki 3050801, Japan Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan

Senba, Y.
论文数: 0 引用数: 0
h-index: 0
机构:
JASRI SPring 8, Kobe, Hyogo 6795198, Japan Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan

Ohashi, H.
论文数: 0 引用数: 0
h-index: 0
机构:
JASRI SPring 8, Kobe, Hyogo 6795198, Japan Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan