Charge characterization in metal-gate/high-κ layers:: Effect of post-deposition annealing and gate electrode

被引：4

作者：

O'Sullivan, B. J. ^{[1
]}

Pourtois, G. ^{[1
]}

Kaushik, V. S. ^{[1
]}

Schram, T. ^{[1
]}

Kittl, J. A. ^{[1
]}

Pantisano, L. ^{[1
]}

De Gendt, S. ^{[1
]}

Heyns, M. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 03期

关键词：

Number:; IST-026828; Acronym:; EC; Sponsor: European Commission; -; FP6; Sponsor: Sixth Framework Programme;

D O I：

10.1063/1.2754647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of varying interfacial SiO2 and high-kappa thickness on charge density within the gate stack are examined. It is demonstrated that there is a significant effect of the gate electrode on the charge density levels within the stack, with one order of magnitude lower charge in the case of Ni3Si2 electrodes, than in the case of tantalum-rich metal electrodes. The effect of post-deposition annealing on high-kappa HfSixOy(N-z) stacks is less significant that that of the electrode. The reasons behind these findings are discussed. (C) 2007 American Institute of Physics.

引用

页数：3

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