Ion bombardment effects on ZnO nanowires during plasma treatment

被引：41

作者：

Ra, H. -W. ^{[1
]}

Choi, K. S. ^{[1
]}

Ok, C. W. ^{[1
]}

Jo, S. Y. ^{[1
]}

Bai, K. H. ^{[2
]}

Im, Y. H. ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Samsung Elect Co LTD, Hwasung 445701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

Carrier concentration - Oxygen vacancies - Zinc oxide - Threshold voltage - Plasma applications - II-VI semiconductors - Nanowires - Inductively coupled plasma;

D O I：

10.1063/1.2965109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the effects of ion bombardment on ZnO nanowires caused by their exposure to an Ar inductively coupled plasma. The conductivity of the individual ZnO nanowire was increased in up to 3 orders of magnitude due to increase in both carrier concentration and mobility, with a substantial negative shift in the threshold gate voltage also being observed. The drastic changes in the electrical properties were attributed to the decrease in species adsorbed on the surface, as well as to the increase in oxygen vacancies near the surface caused by ion bombardment. (C) 2008 American Institute of Physics.

引用

页数：3

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