Ferromagnetic Josephson switching device with high characteristic voltage

被引：139

作者：

Larkin, Timofei I. ^{[2
]}

Bol'ginov, Vitaly V. ^{[2
]}

Stolyarov, Vasily S. ^{[2
]}

Ryazanov, Valery V. ^{[2
,3
]}

Vernik, Igor V. ^{[1
]}

Tolpygo, Sergey K. ^{[1
]}

Mukhanov, Oleg A. ^{[1
]}

机构：

[1] HYPRES Inc, Elmsford, NY 10523 USA

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[3] InQubit Inc, Torrance, CA 90503 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 22期

关键词：

MEMORY CELL; SUPERCONDUCTORS; FREQUENCY; CIRCUITS; KA/CM(2);

D O I：

10.1063/1.4723576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We develop a fast magnetic Josephson junction (MJJ)-a superconducting ferromagnetic device for a scalable high-density cryogenic memory compatible in speed and fabrication with energy-efficient single flux quantum (SFQ) circuits. We present experimental results for superconductor-insulator-ferromagnet-superconductor (SIFS) MJJs with high characteristic voltage IcRn of > 700 mu V proving their applicability for superconducting circuits. By applying magnetic field pulses, the device can be switched between MJJ logic states. The MJJ IcRn product is only similar to 30% lower than that of conventional junction co-produced in the same process, allowing for integration of MJJ-based and SIS-based ultra-fast digital SFQ circuits operating at tens of gigahertz. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723576]

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