Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

被引：22
作者：
Dutta, Mrinmoy [1 ]
Senapati, Asim [1 ]
Ginnaram, Sreekanth [1 ]
Maikap, Siddheswar [1 ,2 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
[2] Chang Gung Mem Hosp CGMH, Dept Obstet Gynecol, Div Gynecol Oncol, Taoyuan 33302, Taiwan
来源：
VACUUM | 2020年 / 176卷
关键词：
Ti/MoS2; Resistive switching; Artificial synapse; Cross-point; Redox; Conductive bridge;
D O I：
10.1016/j.vacuum.2020.109326
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Ti/MoS2 based 9 x 9 conductive bridge cross-points in Al/Cu/Ti/MoS2/Pt structure and its suitability in brain-inspired neuromorphic application have been investigated. Repeatable forming-free multilevel switching cycles with the low current compliances (CCs) of 10 mu A-300 mu A and long program/erase (P/E) endurance of >7 x 10(8) with low P/E current of 10 mu A/100 mu A at a high-speed of 100 ns have been obtained than pure MoS2 based devices. Copper reduction-oxidation (redox) reaction associated resistive switching mechanism through cyclic-voltammetry is also investigated. Conductivity modulated potentiation and depression results as well as LTP/LTD characteristics have been explored. Significantly low energy consumption in between 17 fJ to 398 fJ has been obtained.
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页数：6
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