Low-voltage driven visible and infrared electroluminescence from light-emitting device based on Er-doped TiO2/p+-Si heterostructure

被引：33
作者：
Yang, Yang
Jin, Lu
Ma, Xiangyang [1 ]
Yang, Deren
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 03期
关键词：
MU-M; SILICON NANOCRYSTALS; THIN-FILMS; SI; PHOTOLUMINESCENCE; EMISSION; DIODES;
D O I：
10.1063/1.3678026
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on visible and infrared electroluminescence (EL) from the light-emitting device based on Er-doped TiO2/p(+)-Si heterostructure. Under a forward bias voltage as low as 5.5 V, the device emits similar to 1540 nm infrared light and visible light peaking at 522, 553, 564, and 663 nm, respectively, which are originated from Er3+ intra-4f transitions. It is found that the existence of sufficient oxygen vacancies in TiO2 is critical for triggering the Er-related EL. Furthermore, the energy transfer from the oxygen-vacancy-related excitons in TiO2 matrix to Er3+ ions is supposed to be responsible for the above-mentioned EL. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678026]
引用
收藏
页数：4
相关论文
共 23 条
[1]   1.54 μm emitters based on erbium doped InGaN p-i-n junctions [J].
Dahal, R. ;
Ugolini, C. ;
Lin, J. Y. ;
Jiang, H. X. ;
Zavada, J. M. .
APPLIED PHYSICS LETTERS, 2010, 97 (14)
[2]   Emission of 1.53 μm originating from the lattice site of Er3+ ions incorporated in TiO2 nanocrystals [J].
Fu, Chengyu ;
Liao, Jinsheng ;
Luo, Wenqin ;
Li, Renfu ;
Chen, Xueyuan .
OPTICS LETTERS, 2008, 33 (09) :953-955
[3]   Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si [J].
Garter, M ;
Scofield, J ;
Birkhahn, R ;
Steckl, AJ .
APPLIED PHYSICS LETTERS, 1999, 74 (02) :182-184
[4]   Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices [J].
Iacona, F ;
Pacifici, D ;
Irrera, A ;
Miritello, M ;
Franzò, G ;
Priolo, F ;
Sanfilippo, D ;
Di Stefano, G ;
Fallica, PG .
APPLIED PHYSICS LETTERS, 2002, 81 (17) :3242-3244
[5]   Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices [J].
Irrera, Alessia ;
Iacona, Fabio ;
Franzo, Giorgia ;
Miritello, Maria ;
Lo Savio, Roberto ;
Castagna, Maria Eloisa ;
Coffa, Salvatore ;
Priolo, Francesco .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)
[6]   Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters [J].
Jambois, O. ;
Gourbilleau, F. ;
Kenyon, A. J. ;
Montserrat, J. ;
Rizk, R. ;
Garrido, B. .
OPTICS EXPRESS, 2010, 18 (03) :2230-2235
[7]   Visible and near-infrared photoluminescences of europium-doped titania film [J].
Jia, C. W. ;
Xie, E. Q. ;
Zhao, J. G. ;
Sun, Z. W. ;
Peng, A. H. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
[8]  
KANJILAL A, 2009, APPL PHYS LETT, V94
[9]   Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er-Er energy migration [J].
Kim, In Yong ;
Shin, Jung H. ;
Kim, Kyung Joong .
APPLIED PHYSICS LETTERS, 2009, 95 (22)
[10]   Change in photoluminescence from Er-doped TiO2 thin films induced by optically assisted reduction [J].
Komuro, S ;
Katsumata, T ;
Kokai, H ;
Morikawa, T ;
Zhao, X .
APPLIED PHYSICS LETTERS, 2002, 81 (25) :4733-4735
123