Low-voltage driven visible and infrared electroluminescence from light-emitting device based on Er-doped TiO2/p+-Si heterostructure

被引：32
作者：
Yang, Yang
Jin, Lu
Ma, Xiangyang [1 ]
Yang, Deren
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 03期
关键词：
MU-M; SILICON NANOCRYSTALS; THIN-FILMS; SI; PHOTOLUMINESCENCE; EMISSION; DIODES;
D O I：
10.1063/1.3678026
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on visible and infrared electroluminescence (EL) from the light-emitting device based on Er-doped TiO2/p(+)-Si heterostructure. Under a forward bias voltage as low as 5.5 V, the device emits similar to 1540 nm infrared light and visible light peaking at 522, 553, 564, and 663 nm, respectively, which are originated from Er3+ intra-4f transitions. It is found that the existence of sufficient oxygen vacancies in TiO2 is critical for triggering the Er-related EL. Furthermore, the energy transfer from the oxygen-vacancy-related excitons in TiO2 matrix to Er3+ ions is supposed to be responsible for the above-mentioned EL. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678026]
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页数：4
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