An empirical approach to explain the material removal rate for copper chemical mechanical polishing

被引：16

作者：

Pan Guoshun ^{[1
,2
]}

Wang Ning ^{[1
,2
]}

Gong Hua ^{[1
,2
]}

Liu Yan ^{[2
]}

机构：

[1] Tsinghua Univ, State Key Lab Tribol, Dept Precis Instruments & Mechanol, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Res Inst, Shenzhen 518057, Peoples R China

来源：

TRIBOLOGY INTERNATIONAL | 2012年 / 47卷

基金：

美国国家科学基金会;

关键词：

Chemical mechanical polishing; BTA; Material removal rate; Chelating ligand; MODEL; PLANARIZATION; PRESSURE;

D O I：

10.1016/j.triboint.2011.10.010

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

In this paper, an empirical expression was deduced based on the experimental data for material removal rate of copper chemical mechanical polishing. The parameters of this expression includes the initial chemical corrosion rate(MRR0), the corrosion inhibition efficiency(k) and the mechanical abrading rate(MRRM). The deduced empirical expression revealed that under certain slurry systems, the corrosion inhibition efficiency may always keep unchanged, which may be useful to characterize the inhibition properties of different inhibitors. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：142 / 144

页数：3

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