Preparation of indium sulfide thin films by spray pyrolysis using a new precursor indium nitrate

被引：39
作者：
John, TT
Kartha, CS
Vijayakumar, KP [1 ]
Abe, T
Kashiwaba, Y
机构：
[1] Cochin Univ Sci & Technol, Thin Film Photovolta Div, Dept Phys, Cochin 682022, Kerala, India
[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan
来源：
APPLIED SURFACE SCIENCE | 2005年 / 252卷 / 05期
关键词：
In2S3; indium nitrate; chemical spray pyrolysis; In/S ratio;
D O I：
10.1016/j.apsusc.2005.02.093
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Indium nitrate and thiourea were used as the precursor solutions for preparing indium sulfide thin films using Chemical Spray Pyrolysis (CSP) technique. Films having various In/S ratios were characterized using X-Ray Diffraction (XRD), Energy Dispersive X-ray Analysis (EDX), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), optical absorption, transmission and photosensitivity measurements. Sample having In/S ratio 2/3 showed better crystallinity with band gap 2.66 eV Depth profile of the sample also indicated the formation of indium sulfide. It was also observed that In/S ratio in the initial precursor solution determined the composition as well as electrical properties of the films. Maximum photosensitivity was observed for the sample prepared using solution having In/S ratio 2/4. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码：1360 / 1367
页数：8
相关论文
共 23 条
[1]   Acoustic properties of β-In2S3 thin films prepared by spray [J].
Amlouk, M ;
Ben Saïd, MA ;
Kamoun, N ;
Belgacem, S ;
Brunet, N ;
Barjon, D .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1A) :26-30
[2]   New Cd-free buffer layer deposited by PVD:: In2S3 containing Na compounds [J].
Barreau, N ;
Bernède, JC ;
Marsillac, S ;
Amory, C ;
Shafarman, WN .
THIN SOLID FILMS, 2003, 431 :326-329
[3]   Recent studies on In2S3 containing oxygen thin films [J].
Barreau, N ;
Bernède, JC ;
El Maliki, H ;
Marsillac, S ;
Castel, X ;
Pinel, J .
SOLID STATE COMMUNICATIONS, 2002, 122 (7-8) :445-450
[4]   SYNTHESIS AND PHOTOELECTROCHEMISTRY OF IN2S3 [J].
BECKER, RS ;
ZHENG, T ;
ELTON, J ;
SAEKI, M .
SOLAR ENERGY MATERIALS, 1986, 13 (02) :97-107
[5]  
Bhira L, 2000, PHYS STATUS SOLIDI A, V181, P427, DOI 10.1002/1521-396X(200010)181:2<427::AID-PSSA427>3.0.CO
[6]  
2-P
[7]  
Contreras MA, 1999, PROG PHOTOVOLTAICS, V7, P311, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO
[8]  
2-G
[9]   Electrical properties of β-In2S3 thin films [J].
El Shazly, AA ;
Abd Elhady, D ;
Metwally, HS ;
Seyam, MAM .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (26) :5943-5954
[10]   REACTIVELY EVAPORATED-FILMS OF INDIUM SULFIDE [J].
GEORGE, J ;
JOSEPH, KS ;
PRADEEP, B ;
PALSON, TI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (01) :123-131
123