Study of oxygen-doped GeSbTe film and its effect as an interface layer on the recording properties in the blue wavelength

被引:58
作者
Jeong, TH
Seo, H
Lee, KL
Choi, SM
Kim, SJ
Kim, SY
机构
[1] LG Elect Inst Technol, Devices & Mat Lab, Seocho Gu, Seoul 137724, South Korea
[2] Ajou Univ, Dept Mol Sci & Technol, Suwon 442749, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 3B期
关键词
phase-change optical disk; oxygen-doped GeSbTe thin film; crystal structure; face-centered cubic; hexagonal structure; crystallization temperature; activation energy; complex refractive index; spectroscopic ellipsometry;
D O I
10.1143/JJAP.40.1609
中图分类号
O59 [应用物理学];
学科分类号
摘要
An oxygen-doped GeSbTe interface layer improves the overwriting characteristics of the phase-change optical disk in the blue wavelength. The thermal and optical properties of oxygen-doped GeSbTc film and its crystal structure were investigated. Crystallization temperature and activation energy of the amorphous Ge-Sb-Te-O films are increased with the oxygen concentration while the melting point is decreased. The refractive index of the crystalline state monotonically increases with the oxygen concentration of the film. while its extinction coefficient monotonically decreases. In terms of the crystalline structure. fcc characteristic peaks disappear gradually with oxygen concentration, and above 35 at.% of oxygen, hexagonal peaks appear.
引用
收藏
页码:1609 / 1612
页数:4
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