Study on In-Situ measuring method for average stress gradient of a MEMS film

被引：0
|
作者：
Rong, Hua [1 ]
Wang, Ming [1 ]
机构：
[1] Nanjing Normal Univ, Jiangsu Prov Key Lab Optoelect Technol, Nanjing 210097, Peoples R China
来源：
DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV | 2008年 / 6800卷
关键词：
average stress gradient; cantilever; pull-in voltage; transverse bending; plate theory;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
An electrostatically actuated in-situ measuring method for average stress gradient of a MEMS film was proposed based on pull-in voltages of a set of cantilevers. The key of the measuring method is to realize accurate calculation of pull-in voltages of the cantilevers. To increase the accuracy of the measurement, bending of the cantilevers along the width direction due to the stress gradient was considered. Actual simulations indicate that the calculating speed and the accuracy of the measuring method are ideal, and the method can be applied to in-situ measurement.
引用
收藏
页码：80020 / 80020
页数：7
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