A new method on Cu stress measurement by bandgap voltage reference circuit

被引：0

作者：

Lik, Tan Chan ^{[1
]}

Keat, Tan Chun ^{[1
]}

Thilaga, Govindasamy ^{[1
]}

Siong, Cheng Chin ^{[1
]}

机构：

[1] Infineon Technol Kulim Sdn Bhd, Dept Technol, Lot 10&11,Jalan Hitech 7,Ind Zone Phase 2, Kulim 09000, Kedah, Malaysia

来源：

2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年

关键词：

TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu metallization is not only used in low power logic circuit but also in high power automotive application because of its low resistance and robustness in repetitive clamping. How to characterize the stress in Cu metallization is a crucial issue in BEOL integration scheme. In this paper we design a circuit with bandgap reference voltage and overVoltage capability which are able characterize the correlation of Cu stress and in line wafer bow through electrical measurement.

引用

页数：2

共 4 条

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[2]

Flinn Paul A., 1991, MEASUREMENT INTERPRE, V6

[3] The piezojunction effect in NPN and PNP vertical transistors and its influence on silicon temperature sensors [J].

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[4]

Park Byung-Lyul, 2002, INT TECHN C 2002 P I

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