A K-Band Low-Loss High-Isolation CMOS SPDT Switch Based on Multi-Tap Inductor Technique

被引：6
作者：
Peng, Na [1 ,2 ]
Zhao, Dixian [1 ,2 ]
机构：
[1] Southeast Univ, Natl Mobile Commun Res Lab, Nanjing, Peoples R China
[2] Purple Mt Labs, Nanjing, Peoples R China
来源：
2019 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT2019) | 2019年
关键词：
SPDT Switch; K-band; multi-tap inductor; CMOS; millimeter wave;
D O I：
10.1109/rfit.2019.8929127
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A K-band single-pole double-throw (SPDT) transmit/receive (T/R) switch is presented in this paper. To improve bandwidth while decreasing chip area, the switch is designed using multi-tap inductor together with capacitors that replaces the pi/4 transmission line. It achieves a measured minimum insertion loss of 1.62 dB at 21 GHz, with an isolation of 24 dB. Measured output port to port isolation is better than 22 dB. The return losses at all ports are better than 10 dB from 14 to 28 GHz with a P-1dB of 8 dBm. It is fabricated in 65 nm CMOS and occupies a core chip area of 0.035 mm(2).
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页数：3
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