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Effect of crystallization temperature on energy-storage density and efficiency of lead-free Bi0.5(Na0.8K0.2)0.5TiO3 thin films prepared by sol-gel method
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JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES,
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Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated through Sol—Gel Method
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Journal of Wuhan University of Technology-Mater. Sci. Ed.,
2019, 34
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