Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

被引:9
作者
Massarani, B
Awad, FG
Kaaka, M
Darwich, R
机构
[1] Physics Department, Atomic Energy Commission of Syria, Damascus
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 23期
关键词
D O I
10.1103/PhysRevB.58.15614
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped InP has been studied as a function of pulse duration (t(p)) before and after annealing. Our results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4(F)) and the other is a slow trap (labeled H4(S)). This is shown through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in the P sublattice. [S0163-1829(98)04644-X].
引用
收藏
页码:15614 / 15619
页数:6
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