Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped InP has been studied as a function of pulse duration (t(p)) before and after annealing. Our results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4(F)) and the other is a slow trap (labeled H4(S)). This is shown through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in the P sublattice. [S0163-1829(98)04644-X].