Chalcogenide passivation of III-V semiconductor surfaces

被引：134
作者：
Bessolov, VN [1 ]
Lebedev, MV [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 11期
关键词：
D O I：
10.1134/1.1187580
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Experimental studies of chalcogenide passivation (by sulfur and selenium atoms) of III-V semiconductor surfaces are analyzed. The characteristic features of chemical-bond formation, the atomic structure, and the electronic properties of III-V semiconductor surfaces coated with chalcogenide atoms are examined. Advances in recent years in the application of chalcogenide passivation in semiconductor technology and trends and prospects for further development of this direction are discussed. (C) 1998 American Institute of Physics. [S10637826(98)00111-2].
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页码：1141 / 1156
页数：16
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