Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

被引：21

作者：

Akca, Imran B. ^{[1
]}

Dana, Aykutlu ^{[1
]}

Aydinli, Atilla ^{[1
]}

Rossetti, Marco ^{[2
]}

Li, Lianhe ^{[2
]}

Fiore, Andrea ^{[2
]}

Dagli, Nadir ^{[3
]}

机构：

[1] Bilkent Univ, Dept Phys, Mat Sci & Nanotechnol Program, TR-06800 Ankara, Turkey

[2] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[3] Univ Calif Santa Barbara, Dept ECE, Santa Barbara, CA 93106 USA

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 05期

关键词：

D O I：

10.1364/OE.16.003439

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America.

引用

页码：3439 / 3444

页数：6

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