Integration of high voltage devices on thick SOI substrates for automotive applications

被引：11

作者：

Heinle, U ^{[1
]}

Olsson, J ^{[1
]}

机构：

[1] Univ Uppsala, Angstrom Lab, Dept Solid State Elect, S-75121 Uppsala, Sweden

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 04期

关键词：

D O I：

10.1016/S0038-1101(01)00085-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new process for the integration of high voltage devices and low voltage circuitry on thick SOI substrates. Complete dielectric isolation between high voltage and low voltage devices has been realized by deep trench technology. Diodes and transistors with breakdown voltages of 600 and 420 V, respectively. have been demonstrated within these trench structures. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：629 / 632

页数：4