Au/SnS2/Al Schottky Structure for High Detectivity and Low Dark Current Visible Light Detector

被引:8
作者
Jing, Yongkai [1 ]
Fan, Chao [1 ]
An, Xia [1 ]
Liu, Zhe [1 ]
Sun, Chun [1 ]
Wang, Mengjun [1 ]
Zheng, Hongxing [1 ]
Li, Erping [2 ]
机构
[1] Hebei Univ Technol, State Key Lab Reliabil & Intelligence Elect Equip, Tianjin 300401, Peoples R China
[2] Zhejiang Prov Key Lab Adv Microelect Intelligent, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
Tin disulfide; Schottky structure; light detector; dark current; SNS2; PHOTODETECTORS;
D O I
10.1109/LED.2021.3132396
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to their high optical absorption and atomic thickness, light detectors based on tin disulfide (SnS2) have been investigated extensively. In this letter, a light detector based on a SnS2 monolayer with an Al/SnS2/Au structure for visible light detection is demonstrated. Benefiting from the Au/SnS2 Schottky structure, photoexcited electron-hole pairs are separated, and a remarkable photoresponse is achieved. At 11 mu W/mm(2), the peak responsivity and detectivity are 586.18 A/W and 1.22 x 10(14) Jones, which indicate that these detectors are superior both to most detectors based on two dimensional materials and to commercial Si detectors. The light detector also exhibits a fast response speed with the response time at the microsecond level. Moreover, a low dark current of 2.18 nA is achieved in this structure.
引用
收藏
页码:76 / 79
页数:4
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