A quasi-SOI power MOSFET for radio frequency applications formed by reversed silicon wafer direct bonding

被引：9
作者：
Matsumoto, S [1 ]
Hiraoka, Y
Sakai, T
Yachi, T
Ishiyama, T
Kosugi, T
Kamitsuna, H
Muraguchi, M
机构：
[1] NTT, Telecommun Energy Labs, Kanagawa 2430198, Japan
[2] NTT Adv Technol, Tokyo 1630430, Japan
[3] NTT, Photon Labs, Kanagawa 2430198, Japan
[4] NTT Elect, Kanagawa 2430198, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 07期
关键词：
power MOSFET; SOI technology;
D O I：
10.1109/16.930665
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A quasi-SOH power MOSFET for radio frequency (RF) applications was fabricated by reversed silicon wafer direct bonding (RSDB), Its breakdown voltage was more than twice that of the conventional SOI power MOSFET and its other de characteristics were almost the same. Its maximum oscillation frequency was about 15% higher than that of the conventional SOI power MOSFET, The power-added efficiency (PAE) of the quasi- SOI power MOSFET was higher than the SOP one. It showed excellent PAE of 68% at a drain bias of 3.6 V.
引用
收藏
页码：1448 / 1453
页数：6
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