Orientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge study

被引：26

作者：

Jimenez, I ^{[1
]}

Garcia, MM

Albella, JM

Terminello, LJ

机构：

[1] CSIC, Inst Ciencia Mat Madrid, Madrid, Spain

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期

关键词：

D O I：

10.1063/1.122627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The bias-enhanced nucleation of diamond on Si(100) is studied by angle-dependent x-ray absorption near-edge spectroscopy (XANES). During diamond nucleation, a graphitic phase is also detected. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface. Implications of this result on the mechanism of bias-enhanced nucleation are discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)01646-5].

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页码：2911 / 2913

页数：3

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