Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs

被引：0

作者：

Meneghini, M. ^{[1
]}

Bisi, D. ^{[1
]}

Rossetto, I. ^{[1
]}

De Santi, C. ^{[1
]}

Stocco, A. ^{[1
]}

Hilt, O. ^{[2
]}

Treidel, E. Bahat ^{[2
]}

Wuerfl, J. ^{[2
]}

Rampazzo, F. ^{[1
]}

Meneghesso, G. ^{[1
]}

Zanoni, E. ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] Leibniz Inst Hoechstfrequenztechn, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES X | 2015年 / 9363卷

关键词：

GaN; HEMT; trapping; defects; doping; TRAPS; RELIABILITY; KINETICS;

D O I：

10.1117/12.2079586

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper reviews our recent results on the impact of iron and carbon compensation on the dynamic performance of GaN-HEMTs; based on pulsed and transient characterization, we demonstrate that: (i) the use of Fe-doping may lead to a significant current collapse, due to the presence of a trap with activation energy Ea=0.6eV. We discuss the properties of this trap and its physical origin; (ii) high C-doping levels may favor dynamic Ron increase, due to the presence of a trap level located at Ev+0.84 eV. The effect of this trap can be significantly reduced through the use of a double heterostructure.

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页数：7

相关论文

共 16 条

[1] Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films [J].

Arehart, A. R. ;

Corrion, A. ;

Poblenz, C. ;

Speck, J. S. ;

Mishra, U. K. ;

DenBaars, S. P. ;

Ringel, S. A. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :1750-+

[2] Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs [J].

Bisi, Davide ;

Meneghini, Matteo ;

Marino, Fabio Alessio ;

Marcon, Denis ;

Stoffels, Steve ;

Van Hove, Marleen ;

Decoutere, Stefaan ;

Meneghesso, Gaudenzio ;

Zanoni, Enrico .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (10) :1004-1006

[3] Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN [J].

Cho, HK ;

Kim, CS ;

Hong, CH .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) :1485-1489

[4]

Fang ZQ, 2000, SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, P35, DOI 10.1109/SIM.2000.939193

[5] Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN [J].

Haase, D ;

Schmid, M ;

Kurner, W ;

Dornen, A ;

Harle, V ;

Scholz, F ;

Burkard, M ;

Schweizer, H .

APPLIED PHYSICS LETTERS, 1996, 69 (17) :2525-2527

[6]

Hierro A, 2001, PHYS STATUS SOLIDI B, V228, P309, DOI 10.1002/1521-3951(200111)228:1<309::AID-PSSB309>3.0.CO

[7]

2-N

[8] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies [J].

Honda, Unhi ;

Yamada, Yujiro ;

Tokuda, Yutaka ;

Shiojima, Kenji .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)

[9] GaN-based power HEMTs: Parasitic, Reliability and high field issues [J].

Meneghesso, G. ;

Meneghini, M. ;

Bisi, D. ;

Silvestri, R. ;

Zanandrea, A. ;

Hilt, O. ;

Bahat-Treidel, E. ;

Brunner, F. ;

Knauer, A. ;

Wuerfl, J. ;

Zanoni, E. .

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3, 2013, 58 (04) :187-198

[10] Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons [J].

Meneghini, M. ;

Bisi, D. ;

Marcon, D. ;

Stoffels, S. ;

Van Hove, M. ;

Wu, T. -L. ;

Decoutere, S. ;

Meneghesso, G. ;

Zanoni, E. .

APPLIED PHYSICS LETTERS, 2014, 104 (14)