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Evolution of Structural and Electronic Properties of TiSe2 under High Pressure
被引:27
作者:

Saqib, H.
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Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 201800, Peoples R China Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China

Rahman, S.
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h-index: 0
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Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
UCAS, Sch Phys & Optoelect Engn, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China

Zhao, Yongsheng
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Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China

Cazorla, C.
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Univ Politecn Cataluna, Dept Fis, Barcelona 08034, Spain Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China

Errandonea, D.
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Univ Valencia, Dept Fis Aplicada ICMUV, MALTA Consolider Team, Edificio Invest, Valencia 46100, Spain Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China

Susilo, Resta
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Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China

Zhuang, Yukai
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Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China

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机构:
[1] Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 201800, Peoples R China
[3] Univ Politecn Cataluna, Dept Fis, Barcelona 08034, Spain
[4] Univ Valencia, Dept Fis Aplicada ICMUV, MALTA Consolider Team, Edificio Invest, Valencia 46100, Spain
[5] Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
[6] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China
[7] UCAS, Sch Phys & Optoelect Engn, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China
关键词:
CHARGE-DENSITY WAVES;
SUPERCONDUCTIVITY;
TRANSITION;
1T-TISE2;
PHASE;
RAMAN;
D O I:
10.1021/acs.jpclett.1c02492
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
A pressure-induced structural phase transition and its intimate link with the superconducting transition was studied for the first time in TiSe 2 up to 40 GPa at room temperature using X-ray diffraction, transport measurement, and first-principles calculations. We demonstrate the occurrence of a first-order structural phase transition at 4 GPa from the standard trigonal structure (S.G.P (3) over bar m1) to another trigonal structure (S-G-P (3) over bar c1). Additionally, at 16 GPa, the P (3) over bar c1 phase spontaneously transforms into a monoclinic C2/m phase, and above 24 GPa, the C2/m phase returns to the initial P (3) over bar m1 phase. Electrical transport results show that metallization occurs above 6 GPa. The charge density wave observed at ambient pressure is suppressed upon compression up to 2 GPa with the emergence of superconductivity at 2.5 GPa, with a critical temperature (T-c) of 2 K. A structural transition accompanies the emergence of superconductivity that persists up to 4 GPa. The results demonstrate that the pressure-induced phase transitions explored by the experiments along with the theoretical predictions may open the door to a new path for searching and controlling the phase diagrams of transition metal dichalcogenides.
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页码:9859 / 9867
页数:9
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