Spin dephasing in quantum wires

被引:69
作者
Pramanik, S
Bandyopadhyay, S
Cahay, M
机构
[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[2] Univ Cincinnati, Dept Elect & Comp Engn & Comp Sci, Cincinnati, OH 45221 USA
关键词
D O I
10.1103/PhysRevB.68.075313
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study high-field spin transport in a quantum wire using a semiclassical approach. Spin dephasing (or spin depolarization) in the wire is caused by D'yakonov-Perel' relaxation associated with bulk inversion asymmetry (Dresselhaus spin-orbit coupling) and structural inversion asymmetry (Rashba spin-orbit coupling). The depolarization rate is found to depend strongly on the initial polarization of the spin. If the initial polarization is along the axis of the wire, the spin depolarizes similar to100 times slower compared to the case when the initial polarization is transverse to the wire axis. We also find that in the range 4.2-50 K, temperature has a weak influence and the driving electric field has a strong influence on the depolarization rate. The steady state distribution of the spin components parallel and transverse to the wire axis also depend on the initial polarization. If the initial polarization is along the wire axis, then the steady state distribution of both components is a flat-topped uniform distribution, whereas if the initial polarization is transverse to the wire axis, then the distribution of the longitudinal component resembles a Gaussian, and the distribution of the transverse component is U shaped.
引用
收藏
页数:10
相关论文
共 49 条
  • [1] [Anonymous], MODULAR SERIES SOLID
  • [2] Spin relaxation in asymmetrical heterostructures
    Averkiev, NS
    Golub, LE
    Willander, M
    [J]. SEMICONDUCTORS, 2002, 36 (01) : 91 - 97
  • [3] Spintronics
    Awschalom, DD
    Flatté, ME
    Samarth, N
    [J]. SCIENTIFIC AMERICAN, 2002, 286 (06) : 66 - 73
  • [4] Switching in a reversible spin logic gate
    Bandyopadhyay, S
    Roychowdhury, VP
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (03) : 411 - 416
  • [5] Self-assembled nanoelectronic quantum computer based on the Rashba effect in quantum dots
    Bandyopadhyay, S
    [J]. PHYSICAL REVIEW B, 2000, 61 (20) : 13813 - 13820
  • [6] BIR GL, 1976, ZH EKSP TEOR FIZ, V42, P705
  • [7] Blum K., 2012, DENSITY MATRIX THEOR
  • [8] Spin polarized transport in 1D and 2D semiconductor heterostructures
    Bournel, A
    Dollfus, P
    Bruno, P
    Hesto, P
    [J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS, 1999, 297-2 : 205 - 212
  • [9] Theoretical and experimental considerations on the spin field effect transistor
    Bournel, A
    Delmouly, V
    Dollfus, P
    Tremblay, G
    Hesto, P
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 10 (1-3) : 86 - 90
  • [10] Modelling of gate-induced spin precession in a striped channel high electron mobility transistor
    Bournel, A
    Dollfus, P
    Galdin, S
    Musalem, FX
    Hesto, P
    [J]. SOLID STATE COMMUNICATIONS, 1997, 104 (02) : 85 - 89