SIMS with highly excited primary beams for molecular depth profiling and imaging of organic and biological materials

被引：25

作者：

Matsuo, Jiro ^{[1
,2
]}

Ninomiya, Satoshi ^{[1
,2
]}

Yamada, Hideaki ^{[3
]}

Ichiki, Kazuya ^{[3
]}

Wakamatsu, Yoshinobu ^{[3
]}

Hada, Masaki ^{[3
]}

Seki, Toshio ^{[2
,3
]}

Aoki, Takaaki ^{[1
,2
]}

机构：

[1] Kyoto Univ, Quantum Sci & Engn Ctr, Kyoto 6110011, Japan

[2] Japan Sci & Technol Agcy JST, CREST, Chiyoda Ku, Tokyo 1020075, Japan

[3] Kyoto Univ, Dept Nucl Engn, Kyoto 6110011, Japan

来源：

SURFACE AND INTERFACE ANALYSIS | 2010年 / 42卷 / 10-11期

关键词：

SIMS; cluster ion beam; molecular depth profiling; swift heavy ion beam; ION MASS-SPECTROMETRY; ENERGY;

D O I：

10.1002/sia.3585

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Recent developments in SIMS with both Ar cluster ions and swift heavy ions are presented. With these primary beams, the analysis of organic semiconductors and animal cells shows that one of the key factors to realizing the SIMS analysis of organic materials is high-energy deposition near the surface. Molecular depth profiling and images of organic materials were demonstrated by using SIMS. Copyright (C) 2010 John Wiley & Sons, Ltd.

引用

页码：1612 / 1615

页数：4

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