An integrated tunable band-pass filter using MEMS parallel-plate variable capacitors implemented with 0.35μm CMOS technology

被引：18

作者：

Fouladi, S. ^{[1
]}

Bakri-Kassem, M. ^{[1
]}

Mansour, R. R. ^{[1
]}

机构：

[1] Univ Waterloo, Waterloo, ON N2L 3G1, Canada

来源：

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年

关键词：

CMOS; Integrated tunable filters; microelectromechanical devices; RF MEEMS; tunable capacitors;

D O I：

10.1109/MWSYM.2007.380518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an integrated tunable bandpass filter with RF MENIS varactors fabricated using the TSMC 0.35 mu m CMOS process. A maskless post-processing technique is developed which enables the fabrication of RF MENIS parallel-plate capacitors with a high quality factor and a very compact size. A 2-pole coupled line tunable bandpass filter with a center frequency of 9.5GRz and a 9% relative bandwidth is designed, fabricated and tested. A tuning range of 17% is achieved using integrated variable MENIS capacitors with a quality factor exceeding 20. The filter has an insertion loss of 5.66dB and occupies a chip area of 1.2 x 2.1 mm(2).

引用

页码：505 / 508

页数：4

共 4 条

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[J]. 2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, : 1249 - +
[2] K-band MMIC active band-pass filters
Fan, KW
Weng, CC
Tsai, ZM
Wang, H
Jeng, SK
[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2005, 15 (01) : 19 - 21
[3] FEDDER GK, 2005, IEEE SOLID STATE CIR, V1, P390
[4] Oz A, 2003, IEEE MTT S INT MICR, pA97, DOI 10.1109/MWSYM.2003.1211043

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