Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition

被引：47

作者：

Mao, JM

Sun, LF

Qian, LX

Pan, ZW

Chang, BH

Zhou, WY

Wang, G

Xie, SS

机构：

[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[2] Natl Cent Univ, Dept Phys, Beijing 100081, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 25期

关键词：

D O I：

10.1063/1.121629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes. (C) 1998 American Institute of Physics. [S0003-6951(98)03625-0].

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页码：3297 / 3299

页数：3

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