The metal-insulator transition induced in Bi2Sr1.93Cu1.01O6+δ thin films by oxygen concentration in sputtering gas

被引：3
作者：
Pop, A. V. [1 ]
Ilonca, G.
Pop, M.
Marconi, D.
机构：
[1] Univ Babes Bolyai, Fac Phys, Cluj Napoca 400084, Romania
[2] Tech Univ, Dept Engn Proc Mat, Cluj Napoca, Romania
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2007年 / 460卷 / SPEC. ISS.期
关键词：
superconductors; thin films; X-ray diffraction; electrical resistivity;
D O I：
10.1016/j.physc.2007.04.083
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Bi2Sr1.93Cu1.01O6+delta thin films were deposited onto SiTiO3 substrates by using DC magnetron sputtering. The structural characterization was carried out by X-ray diffraction. The effect of different oxygen pressures (fO(2)) in the sputtering gas on the electrical resistivity of thin films is presented. The value of sheet resistance per CUO2 layer, R-Q, is larger khan the conventional quantum resistance, but is in agreement with the value estimated for 2D disordered systems. The log(1/T) behaviour of rho(T), in the region of the metal-insulator (MI) transition, is analyzed in a non-Fermi liquid model with a singular density of states in the presence of randomly distributed non-magnetic impurities. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：817 / 818
页数：2
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