Thermal Transport Mechanism of Amorphous HfO2: A Molecular Dynamics Based Study

被引:9
作者
Zhang Honggang [1 ]
Wei Han [1 ]
Bao Hua [1 ]
机构
[1] Shanghai Jiao Tong Univ, Univ Michigan Shanghai Jiao Tong Univ Joint Inst, Shanghai 200240, Peoples R China
基金
中国国家自然科学基金;
关键词
amorphous HfO2; molecular dynamics; thermal conductivity; mean free path; size effect; temperature effect; ATOMIC LAYER DEPOSITION; CONDUCTIVITY; TRANSISTORS;
D O I
10.1007/s11630-022-1626-5
中图分类号
O414.1 [热力学];
学科分类号
摘要
Amorphous hafnium dioxide (a-HfO2) has attracted increasing interest in the application of semiconductor devices due to its high dielectric constant. However, the thermal transport properties of a-HfO2 are not well understood, which hinders its potential application in electronics. In this work, we systematically investigate the thermal transport property of a-HfO2 using the molecular dynamics method. The non-equilibrium molecular dynamics simulations reveal that the thermal conductivity of a-HfO2 is length-dependent below 100 nm. Spectrally decomposed heat current further proves that the thermal transport of propagons and diffusons is sensitive to the system length. The thermal conductivity is found to increase with temperature using Green-Kubo mode analysis. We also quantify the contribution of each carrier to the thermal conductivity at different temperatures. We find that propagons are more important than diffusons in thermal transport at low temperatures (<100 K). In comparison, diffusons dominate heat transport at high temperatures. Locons have negligible contribution to the total thermal conductivity.
引用
收藏
页码:1052 / 1060
页数:9
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