Study of a new type nominal "washboard-like" triangular defects in 4H-SiC 4° off-axis (0001) Si-face homoepitaxial layers

被引：10

作者：

Hu, Jichao ^{[1
]}

Jia, Renxu ^{[2
]}

Niu, Yingxi ^{[2
,3
]}

Zang, Yuan ^{[1
]}

Pu, Hongbin ^{[1
]}

机构：

[1] Xian Univ Technol, Dept Elect Engn, Xian 710048, Shaanxi, Peoples R China

[2] Xidian Univ, Sch Microelect, State Key Lab Wide Band Gap Semicond Technol, Xian 710071, Shaanxi, Peoples R China

[3] Global Energy Interconnect Res Inst, State Key Lab Adv Power Transmiss Technol, Beijing 102211, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 506卷

关键词：

Defects; Crystal structure; Optical microscopy; Chemical vapor deposition processes; POWER-SWITCHING DEVICES; POLYTYPES;

D O I：

10.1016/j.jcrysgro.2018.10.026

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work, 4H-SiC epilayers were performed on 4 degrees off-axis Si-face substrates by horizontal hot wall chemical vapor deposition (HWCVD). A new type nominal "washboard-like" triangular defects without particulate located at their apex were observed. The microstructure and formation mechanism were investigated by micro-Raman spectroscopy, electron backscatter diffraction (EBSD) and cross-section transmission electron microscopy (TEM). Characterization results indicate that the triangular defects observed have a 3C-SiC nature. In addition, the phenomenon that a serious of other triangular defects of which the vertices arranged in a row neatly with the new type nominal "washboard-like" triangular defect was observed. Based on these observations and analysis, a model of the formation mechanism of the triangular defect had been proposed. In this model, the 3C-SiC crystal formed by 2D nucleation of adatoms on the terraces is mainly triggered by the scratch in the substrate.

引用

页码：14 / 18

页数：5

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