The role of the density of interface states in interfacial energy level alignment of PTCDA

被引:20
作者
Khoshkhoo, Mahdi Samadi [1 ]
Peisert, Heiko [1 ]
Chasse, Thomas [1 ,2 ]
Scheele, Marcus [1 ,2 ]
机构
[1] Univ Tubingen, Inst Phys & Theoret Chem, Morgenstelle 18, D-72076 Tubingen, Germany
[2] Univ Tubingen, Ctr Light Matter Interact, Sensors & Analyt LISA, Morgenstelle 15, D-72076 Tubingen, Germany
关键词
Numerical electrostatic model; Energy level alignment; Fermi level pinning; Density of interface states; PTCDA; Injection barrier; ORGANIC SEMICONDUCTOR INTERFACES; FIELD-EFFECT TRANSISTORS; CHARGE NEUTRALITY LEVEL; LIGHT-EMITTING-DIODES; ELECTRONIC-STRUCTURE; DIPOLE FORMATION; SOLAR-CELLS; METALS; AG(111); MODEL;
D O I
10.1016/j.orgel.2017.06.065
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We introduce extensions to a recently developed numerical model to understand the origin of universal Fermi level pinning of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) and its underlying mechanism. Our calculations are supported by ultraviolet and X-ray photoelectron spectroscopy to investigate the electronic structure of PTCDA on a wide range of substrates with different work functions and coupling interactions. For 20 nm thick layers of PTCDA, nearly unchanged hole injection barriers on all substrates are observed without any dependence on the type of substrate (unreactive, reactive or passivated metals and polymers). The simulation results demonstrate how the shape of the DOS near the interface has long-range influence on key parameters (e.g. the barrier to charge injection) of the entire organic film. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:249 / 254
页数:6
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